Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTH182N055T
IXTQ182N055T
V DSS
I D25
R DS(on)
= 55 V
= 182 A
≤ 5.0 m ?
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
Maximum Ratings
55 V
55 V
G
D
(TAB)
V GSM
I D25
I LRMS
I DM
Transient
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
± 20
182
75
490
V
A
A
A
TO-3P (IXTQ)
S
I AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 5 ?
25
1.0
3
A
J
V/ns
G
D
S
(TAB)
P D
T J
T JM
T stg
T L
T SOLD
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
360
-55 ... +175
175
-55 ... +175
300
260
W
° C
° C
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
M d
Mounting torque
1.13 / 10 Nm/lb.in.
Features
Ultra-low On Resistance
Weight
TO-3P
TO-247
5.5
6
g
g
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
55 V
Advantages
Easy to mount
Space savings
High power density
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 150 ° C
2.0
4.0
± 200
5
250
V
nA
μ A
μ A
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
R DS(on)
V GS = 10 V, I D =25 A, Notes 1, 2
3.5
5.0
m ?
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
DS99682 (11/06)
? 2006 IXYS CORPORATION All rights reserved
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相关代理商/技术参数
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IXTH1N100 功能描述:MOSFET 0.1 Amps 1000V 80 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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